Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0310 cm and 5.6310 cm with the corresponding Hall mobility varying from 2320 to 1042 cm/V s. © 2001 American Institute of Physics. @DOI: 10.1063/1.1337599#